InAlAs/InGaAs metal‐semiconductor‐metal photodiodes heteroepitaxially grown on Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111055
Reference9 articles.
1. First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate
2. Optical third-harmonic generation from poly(p-phenylenevinylene) thin films
3. A high quantum efficiency GaInAs‐InP photodetector‐on‐silicon substrate
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