Modeling and simulation of bulk gallium nitride power semiconductor devices-Reference-Cited by-同舟云学术

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Modeling and simulation of bulk gallium nitride power semiconductor devices

Published:2016-05 Issue:5 Volume:6 Page:055006
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Sabui G.¹^ORCID,Parbrook P. J.²³,Arredondo-Arechavala M.⁴,Shen Z. J.¹

Affiliation:

1. Department of Electrical and Computer Engineering, Illinois Institute of Technology, Chicago, IL-60616 USA

2. Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork, Ireland

3. School of Engineering, University College Cork, College Road, Ireland

4. Queen’s University Belfast, University Rd, Belfast BT7 1NN, Northern Ireland

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948794

Reference81 articles.

1. A. Lidow, in Proc. Int. Symp. Power Semicond. Devices ICs, 2015-June (2015), p. 1.

2. Vertical Power p-n Diodes Based on Bulk GaN

3. D. Disney, H. Nie, A. Edwards, D. Bour, H. Shah, and I.C. Kizilyalli, in Proc. Int. Symp. Power Semicond. Devices ICs (Kanazawa, 2013), pp. 59–62.

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