Quantum dots induced by strain from buried and surface stressors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125563
Reference14 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Strain‐induced confinement of carriers to quantum wires and dots within an InGaAs‐InP quantum well
3. Luminescence from excited states in strain-inducedInxGa1−xAs quantum dots
4. Charge separation in coupled InAs quantum dots and strain-induced quantum dots
5. Confinement effect in a quantum well dot induced by an InP stressor
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2. Generation of nonlinear polarization to emit terahertz waves in above gap states in GaSb/AlGaSb multiple quantum wells;Applied Physics Express;2023-05-01
3. Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots;Journal of Nanomaterials;2019-04-28
4. Effects of Strain in Low-Dimensional Semiconductor Structures;Nanoscience and Nanotechnology Letters;2017-07-01
5. GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures;Nanoscale Research Letters;2015-08-25
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