Nonparabolic subband structure of Ga0.47In0.53As‐InP quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95526
Reference9 articles.
1. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
2. Band structure of semiconductor superlattices
3. A new semiconductor superlattice
4. Superlattice band structure in the envelope-function approximation
5. Two-dimensional magnetophonon resonance. I. GaInAs-InP superlattices
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