Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3-Reference-Cited by-同舟云学术

Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3

Published:2020-03-01 Issue:3 Volume:10 Page:035327
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Hussain Jibran¹,Abbasi Haris Naeem¹,Wang Wei¹,Wang Yan-Feng¹,Wang Ruozheng¹,Wang Hong-Xing¹²^ORCID

Affiliation:

1. Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China

2. Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China

Funder

National Key R&D Program of China

National Science Foundation of China

Donguan Introduction Program of Leading Innovative and Entrepreneurial Talents

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0002120

Reference31 articles.

1. Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect Transistor

2. RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study

3. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors

4. Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers

5. Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications

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