Controllable growth of large-area atomically thin ReS2 films and their thickness-dependent optoelectronic properties-Reference-Cited by-同舟云学术

Controllable growth of large-area atomically thin ReS2 films and their thickness-dependent optoelectronic properties

Published:2019-04-15 Issue:15 Volume:114 Page:153102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo Zongliang¹,Wei Aixiang¹,Zhao Yu¹²^ORCID,Tao Lili¹,Yang Yibin¹^ORCID,Zheng Zhaoqiang¹^ORCID,Luo Dongxiang¹,Liu Jun¹,Li Jingbo³

Affiliation:

1. Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China

2. Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China

3. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Funder

National Natural Science Foundation of China

Pearl River S and T Nova Program of Guangzhou

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5087456

Reference32 articles.

1. Advent of 2D Rhenium Disulfide (ReS 2 ): Fundamentals to Applications

2. Chemically exfoliated ReS2nanosheets

3. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

4. Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2

5. Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)

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