Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362749
Reference12 articles.
1. Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs
2. 650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors
3. 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/
4. The effect of interface and alloy quality on the DC and RF performance of Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As HEMTs
5. Off-state breakdown in InAlAs/InGaAs MODFET's
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