Lampert triangle formation and relaxation behavior in doped poly(3,4-ethylenedioxythiophene) devices
Author:
Affiliation:
1. Department of Physics, Indian Institute of Science, Bangalore 560012, India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0042737
Reference70 articles.
1. Simplified Theory of Space-Charge-Limited Currents in an Insulator with Traps
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3. Third Side of the Lampert Triangle in Fitting Experimental Data
4. Modified Lampert triangle in an organic field effect transistor with traps
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