Carrier removal and defect behavior inp‐type InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351946
Reference7 articles.
1. Electron Irradiation Damage in Radiation-Resistant InP Solar Cells
2. Capacitance Transient Spectroscopy
3. Deep level transient spectroscopy of irradiatedp‐type InP grown by metalorganic chemical vapor deposition
4. Radiation damage in InP solar cells
5. A model of deep center formation and reactions in electron irradiated InP
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanisms for Radiation Resistance of InP Photovoltaic Cells: A First Principle Study;Solar RRL;2023-01-12
2. Capacitance changes in neutron irradiated n-type silicon: The flux effect;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-08
3. Carrier removal in p-type InP;IEEE Transactions on Nuclear Science;1998-12
4. High and low-energy proton radiation damage in p/n InP MOCVD solar cells;Progress in Photovoltaics: Research and Applications;1996-03
5. Deep level defects and carrier removal due to proton and alpha particle irradiation of InP;Journal of Applied Physics;1994-03-15
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