Carrier removal and defect behavior inp‐type InP

Author:

Weinberg I.,Swartz C. K.,Drevinsky P. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Mechanisms for Radiation Resistance of InP Photovoltaic Cells: A First Principle Study;Solar RRL;2023-01-12

2. Capacitance changes in neutron irradiated n-type silicon: The flux effect;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-08

3. Carrier removal in p-type InP;IEEE Transactions on Nuclear Science;1998-12

4. High and low-energy proton radiation damage in p/n InP MOCVD solar cells;Progress in Photovoltaics: Research and Applications;1996-03

5. Deep level defects and carrier removal due to proton and alpha particle irradiation of InP;Journal of Applied Physics;1994-03-15

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