Proton-induced disorder in InP-based resonant tunneling diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124348
Reference9 articles.
1. Radiation Damage of Silicon and Diamond by High Energy Neutrons, Protons and α Particles
2. Effect of Si doping in AlAs barrier layers of AlAs‐GaAs‐AlAs double‐barrier resonant tunneling diodes
3. Elastic scattering centers in resonant tunneling diodes
4. Resistivity increase in MBE Ga0.47In0.53As following ion bombardment
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1. RADIATION EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS;International Journal of High Speed Electronics and Systems;2003-03
2. Intersubband transitions in proton irradiated In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate;Applied Physics Letters;2002-10-28
3. Proton and H+-ion radiation effect on intersubband transition in GaAs/AlGaAs multiple quantum wells;Materials for Infrared Detectors;2001-11-12
4. Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes;Applied Physics Letters;2001-04-23
5. He+–ion irradiation effect on intersubband transitions in GaAs/AlGaAs multiple quantum wells;Journal of Applied Physics;2001-03-15
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