Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

Published:2016-07-28 Issue:4 Volume:120 Page:045701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tangi Malleswararao¹,Mishra Pawan¹,Janjua Bilal¹,Ng Tien Khee¹,Anjum Dalaver H.²,Prabaswara Aditya¹,Yang Yang²,Albadri Abdulrahman M.³,Alyamani Ahmed Y.³^ORCID,El-Desouki Munir M.³,Ooi Boon S.¹

Affiliation:

1. Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

2. Adavanced nanofabrication Imaging and characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

3. National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086, Saudi Arabia

Funder

King Abdullah University of Science and Technology (KAUST)

King Abdulaziz City for Science and Technology (KACST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4959260

Reference50 articles.

1. III-Nitride Ultraviolet Emitters

2. Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon

3. Review of recent progress of III-nitride nanowire lasers

4. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

5. Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon

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