Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3396187
Reference19 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
3. The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
4. Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-$\mu$m p-Type Modulation-Doped Quantum-Dot Laser
5. High-speed 1.3μm tunnel injection quantum-dot lasers
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1. Comparison between InP-based quantum dot lasers with and without tunnel injection quantum well and the impact of rapid thermal annealing;Journal of Crystal Growth;2019-06
2. Ultrafast electronic spectroscopy on the coupling of Stranski-Krastanov and submonolayer quantum dots for potential application in near infrared light harvesting;Materials Research Express;2019-05-03
3. Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier;Physical Review B;2018-09-14
4. Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures;Scientific Reports;2018-08-17
5. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers;Journal of Crystal Growth;2018-06
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