Operating mechanisms of highly-reproducible write-once-read-many-times memory devices based on graphene quantum dot:poly(methyl silsesquioxane) nanocomposites-Reference-Cited by-同舟云学术

Operating mechanisms of highly-reproducible write-once-read-many-times memory devices based on graphene quantum dot:poly(methyl silsesquioxane) nanocomposites

Published:2017-01-02 Issue:1 Volume:110 Page:013301
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bok Chang Han¹,Wu Chaoxing¹^ORCID,Kim Tae Whan¹

Affiliation:

1. Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, South Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4973358

Reference25 articles.

1. Flexible Organic Bistable Devices Based on Graphene Embedded in an Insulating Poly(methyl methacrylate) Polymer Layer

2. Electrical memory devices based on inorganic/organic nanocomposites

3. Efficient tristable resistive memory based on single layer graphene/insulating polymer multi-stacking layer

4. Polymer-Based Resistive Memory Materials and Devices

5. Memory stabilities and mechanisms of organic bistable devices with a phase-separated poly(methylmethacrylate)/poly(3-hexylthiophene) hybrid layer

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