Activation energy of negative fixed charges in thermal ALD Al2O3-Reference-Cited by-同舟云学术

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Activation energy of negative fixed charges in thermal ALD Al2O3

Published:2016-08-08 Issue:6 Volume:109 Page:061602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kühnhold-Pospischil S.¹²³,Saint-Cast P.¹,Richter A.¹,Hofmann M.¹^ORCID

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg, Germany

2. Institute of Physical Chemistry, Albert-Ludwigs-Universität Freiburg, Albertstr. 21, 79104 Freiburg, Germany

3. Freiburg Materials Research Center FMF, Albert-Ludwigs-Universität Freiburg, Stefan-Meier-Str. 21, 79104 Freiburg, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4960097

Reference26 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

3. S. Zafar , A. Callegari , E. Gusev , and M. V. Fischetti , in International Electron Devices Meeting, 2002. IEDM'02 (IEEE, 2002), pp. 517–520.

4. Low‐Temperature Surface Passivation of Silicon for Solar Cells

5. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

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