Theoretical study of the photovoltaic properties of polycrystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336941
Reference35 articles.
1. The electrical properties of polycrystalline silicon films
2. Zero‐bias resistance of grain boundaries in neutron‐transmutation‐doped polycrystalline silicon
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4. Efficiency calculations for thin-film polycrystalline semiconductor Schottky barrier solar cells
5. Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
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1. Modeling the current-voltage characteristics of thin-film silicon solar cells based on photo-induced electron transfer processes;Journal of Environmental Sciences;2013-12
2. Theoretical study of the influence of doping concentration on the performance of polycrystalline silicon solar cells;Journal of Applied Physics;1992-05
3. Grain boundary barrier heights and recombination velocities in polysilicon under optical illumination;Solar Energy Materials;1991-07
4. Photovoltaic Effect in Schottky Diodes. Contribution to Theory and Experiment;physica status solidi (a);1990-12-16
5. Electrical Properties and Their Depth Variation in Poly-Si under AM1 Illumination;physica status solidi (a);1990-11-16
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