Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in Co2MnSi/MgO/CoFe magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3156858
Reference10 articles.
1. Search for Half-Metallic Compounds in Co2MnZ (Z=IIIb, IVb, Vb Element)
2. Huge Spin-Polarization of L21-Ordered Co2MnSi Epitaxial Heusler Alloy Film
3. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
4. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction
5. Coherent tunnelling conductance in magnetic tunnel junctions of half-metallic full Heusler alloys with MgO barriers
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1. Magnetization dynamics of a CoFe/Co2MnSi magnetic bilayer structure;Journal of Applied Physics;2023-03-01
2. Electronic structure of the full-Heusler Co$$_{2-x}$$Fe$$_{1+x}$$Si and half-Heusler CoFeSi alloys obtained by first-principles calculations and ultrasoft X-ray emission spectroscopy;The European Physical Journal B;2022-03
3. Pressure dependent structural, elastic and mechanical properties with ground state electronic and optical properties of half-metallic Heusler compounds Cr2YAl (Y=Mn, Co): first-principles study;Heliyon;2021-12
4. Heusler alloys for spintronic devices: review on recent development and future perspectives;Science and Technology of Advanced Materials;2021-03-29
5. Comparative study of spin-dependent transport in Co2FeAl/MgAl2O4/CoFe magnetic tunnel junctions with and without thin CoFe interface insertion: an elastic and inelastic scattering model analysis;Journal of Physics D: Applied Physics;2019-11-12
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