Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

Published:2015-02-09 Issue:6 Volume:106 Page:063903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vaisman M.¹,Tomasulo S.¹,Masuda T.¹,Lang J. R.¹,Faucher J.¹,Lee M. L.¹

Affiliation:

1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA

Funder

National Science Foundation (NSF)

Toyota Motor Corporation (Toyota)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4908181

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