Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, USA
Funder
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4902921
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