Oxygen vacancy induced magnetization switching in Fe3O4 epitaxial ultrathin films on GaAs(100)-Reference-Cited by-同舟云学术

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Oxygen vacancy induced magnetization switching in Fe3O4 epitaxial ultrathin films on GaAs(100)

Published:2015-05-04 Issue:18 Volume:106 Page:182401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Zhaocong¹²³,Chen Qian¹,Zhai Ya¹,Wang Jinlan¹,Xu Yongbing²,Wang Baoping³

Affiliation:

1. Department of Physics, Southeast University, Nanjing 211189, China

2. Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO10 5DD, United Kingdom

3. School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China

Funder

NSF of Jiangsu province of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4919862

Reference33 articles.

1. Intrinsic Spin Seebeck Effect inAu/YIG

2. Spin Hall effect devices

3. Electric-field-assisted switching in magnetic tunnel junctions

4. Magnetic nano-oscillator driven by pure spin current

5. Evidence for the half-metallic ferromagnetic state ofFe3O4by spin-resolved photoelectron spectroscopy

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