Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction
Author:
Affiliation:
1. Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53211, USA
2. Naval Research Laboratory, Washington, DC 20375, USA
Funder
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4890405
Reference39 articles.
1. Barrier inhomogeneities at Schottky contacts
2. Electron transport at metal-semiconductor interfaces: General theory
3. Effects of barrier height distribution on the behavior of a Schottky diode
4. The electronic properties of graphene
5. Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
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