Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4894831
Reference21 articles.
1. Origin of forward leakage current in GaN-based light-emitting devices
2. High current-induced degradation of AlGaN ultraviolet light emitting diodes
3. Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress
4. Hot carrier-induced emission from the InGaN/GaN light-emitting diode by characterizing reverse-bias electroluminescence
5. Optical characterizations and reverse-bias electroluminescence observation for reliability investigations of the InGaN light emitting diode
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1. Deterioration of near-UV GaN-based LEDs in seawater vapour;Results in Physics;2020-12
2. Degradation mechanisms of bias stress on nitride-based near-ultraviolet light-emitting diodes in salt water vapor ambient;Microelectronic Engineering;2019-10
3. An explanation for catastrophic failures of GaN-based vertical structure LEDs subjected to thermoelectric stressing;Journal of Physics D: Applied Physics;2015-07-02
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