Evaluation of band offset at amorphous-Si/BaSi2 interfaces by hard x-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

Evaluation of band offset at amorphous-Si/BaSi2 interfaces by hard x-ray photoelectron spectroscopy

Author:

Takabe Ryota¹,Takeuchi Hiroki¹,Du Weijie¹,Ito Keita¹²³^ORCID,Toko Kaoru¹,Ueda Shigenori⁴⁵,Kimura Akio⁶,Suemasu Takashi¹

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. Japan Society for the Promotion of Science (JSPS), Chiyoda, Tokyo 102-0083, Japan

3. Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

4. Synchrotron X-Ray Station at SPring-8, National Institute for Materials Science (NIMS), Sayo, Hyogo 679-5148, Japan

5. Quantum Beam Unit, NIMS, Tsukuba, Ibaraki 305-0047, Japan

6. Graduate School of Science, Hiroshima University, Higashi-Hiroshima 739-8526, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Core Research for Evolutional Science and Technology, Japan Science and Technology Agency (CREST, JST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference46 articles.

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