Nitrogen doped-ZnO/n-GaN heterojunctions-Reference-Cited by-同舟云学术

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Nitrogen doped-ZnO/n-GaN heterojunctions

Published:2011-04-15 Issue:8 Volume:109 Page:084330
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Xin Yi,Fang Fang,Ng Alan M. C.,Djurišič Aleksandra B.,Cheah Kok Wai,Ling Chi Chung,Chan Wai Kin,Fong Patrick W. K.,Lui Hsian Fei,Surya Charles

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3575178

Reference34 articles.

1. A comprehensive review of ZnO materials and devices

2. Fundamentals of zinc oxide as a semiconductor

3. Defects in ZnO

4. Why nitrogen cannot lead to p-type conductivity in ZnO

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1. Electrical conduction mechanism in nanocrystalline ZnO induced by donor/acceptor doping;Journal of Materials Science: Materials in Electronics;2021-06-28

2. Visibly transparent metal oxide diodes prepared by solution processing;Optical Materials;2018-01

3. In-situ fabrication of reduced graphene oxide (rGO)/ZnO heterostructure: surface functional groups induced electrical properties;Electrochimica Acta;2016-04

4. p-Type ZnO materials: Theory, growth, properties and devices;Progress in Materials Science;2013-07

5. Two-dimensional electron Gas in ZnMgO/ZnO heterostructures;Acta Physica Sinica;2013

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