Wafer-scale CMOS-compatible graphene Josephson field-effect transistors

Author:

Generalov Andrey A.1ORCID,Viisanen Klaara L.1ORCID,Senior Jorden1ORCID,Ferreira Bernardo R.1ORCID,Ma Jian2ORCID,Möttönen Mikko12ORCID,Prunnila Mika1ORCID,Bohuslavskyi Heorhii1ORCID

Affiliation:

1. VTT Technical Research Centre of Finland Ltd 1 ., P.O. Box 1000, FI-02044 VTT, Espoo, Finland

2. QCD Labs, QTF Centre of Excellence, Department of Applied Physics, Aalto University 2 , P.O. Box 13500, FIN-00076 Aalto, Finland

Abstract

Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. Applications of JoFETs range from parametric amplifiers and superconducting qubits to a variety of integrated superconducting circuits. Here, we report on graphene JoFET devices fabricated with wafer-scale complementary metal-oxide-semiconductor (CMOS)-compatible processing based on chemical-vapor-deposited monolayer graphene encapsulated with atomic-layer-deposited Al2O3 gate oxide, lithographically defined top gate, and evaporated superconducting Ti/Al source, drain, and gate contacts. By optimizing the contact resistance down to ∼170 Ω μm, we observe proximity-induced superconductivity in the JoFET channels with different gate lengths of 150–350 nm. The Josephson junction devices show reproducible critical current Ic tunablity with the local top gate. Our JoFETs are in the short diffusive limit with the Ic reaching up to ∼3 µA for a 50 µm channel width. Overall, our demonstration of CMOS-compatible two-dimensional (2D) material-based JoFET fabrication process is an important step toward graphene-based integrated quantum circuits.

Funder

Business Finland

H2020 European Research Council

HORIZON EUROPE Digital, Industry and Space

Jane ja Aatos Erkon Säätiö

Luonnontieteiden ja Tekniikan Tutkimuksen Toimikunta

Publisher

AIP Publishing

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