On the structure and photoluminescence of dislocations in silicon
Author:
Affiliation:
1. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia
Funder
Russian Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011329
Reference48 articles.
1. Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters
2. Dislocation-related photoluminescence in silicon
3. Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates
4. Room temperature electroluminescence from dislocation‐rich silicon
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