Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles-Reference-Cited by-同舟云学术

Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles

Published:2017-04-14 Issue:14 Volume:121 Page:144503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Cheng¹²,Vaynzof Yana¹³,Lakhwani Girish¹⁴^ORCID,Beirne Gareth J.¹,Wang Jianpu¹⁵,Greenham Neil C.¹

Affiliation:

1. Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom

2. Macromolecular Chemistry I, University of Bayreuth, 95440 Bayreuth, Germany

3. Centre for Advanced Materials, Im Neuenheimer Feld 225, Heidelberg University, Heidelberg 69120, Germany

4. School of Chemistry, The University of Sydney, NSW, Australia

5. Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979973

Reference44 articles.

1. Nanoionics-based resistive switching memories

2. Function by defects at the atomic scale – New concepts for non-volatile memories

3. High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

4. Introduction to flash memory

5. Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

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