Additional stress-induced band gap narrowing in a silicon die
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2833435
Reference14 articles.
1. Influence of process-induced stress on device characteristics and its impact on scaled device performance
2. Influence of process-induced stress on device characteristics and its impact on scaled device performance
3. STI stress-induced increase in reverse bias junction capacitance
4. STI stress-induced increase in reverse bias junction capacitance
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