Strain relief mechanism for damage growth during high‐dose, O+implantation of Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110103
Reference24 articles.
1. Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon
2. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
3. Effect of Intermediate Thermal Processing on Microstructural Changes of Oxygen Implanted Silicon-on-Insulator Material
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