Double Acceptor Behavior of Cu in Te‐Doped GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1714522
Reference13 articles.
1. Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide
2. Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide
3. Properties ofp‐Type GaAs Prepared by Copper Diffusion
4. Precipitation of Copper in Gallium Arsenide
5. Behavior of lattice defects in GaAs
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1. Evidence For Non-Correlation Between The 0.15 eV And 0.44 eV Cu-Related Acceptor Levels In GaAs;MRS Proceedings;1996
2. Copper as an electron trap in GaAs0.6P0.4;Applied Physics A Solids and Surfaces;1994-09
3. Thermally stimulated current related to Cu antisite‐vacancy complex defects in Cu‐diffused semi‐insulating GaAs;Applied Physics Letters;1994-08-08
4. Influence of arsenic vapor pressure during copper diffusion on deep level formation in silicon-doped gallium arsenide;Journal of Electronic Materials;1993-04
5. Interaction of hydrogen and deuterium with copper in GaAs;Applied Physics Letters;1992-12-14
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