Anisotropy of electron and hole g-factors in (In,Ga)As quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3665634
Reference17 articles.
1. Spin Physics in Semiconductors
2. Composition and strain dependence of band offsets at metamorphicInxGa1−xAs∕InyAl1−yAsheterostructures
3. Universal behavior of the electrongfactor inGaAs∕AlxGa1−xAsquantum wells
4. Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots
5. Zeeman spin splittings in semiconductor nanostructures
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2. Towards spin state tailoring of charged excitons in InGaAs quantum dots using oblique magnetic fields;Physical Review B;2024-02-27
3. Enhanced Spin Coherence of a Self-Assembled Quantum Dot Molecule at the Optimal Electrical Bias;Physical Review Letters;2022-07-07
4. Homogeneous optical anisotropy in an ensemble of InGaAs quantum dots induced by strong enhancement of the heavy-hole band Landé parameter q;Physical Review B;2021-10-18
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