Effect of the spatial current dynamics on radiative characteristics of high-power lasers-thyristors based on AlGaAs/GaAs heterostructures
Author:
Affiliation:
1. Ioffe Institute, 194021 St. Petersburg, Russia
2. Stel'makh Research and Development Institute “Polyus,” 117342 Moscow, Russia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975411
Reference37 articles.
1. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
2. Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers
3. Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905 nm) asymmetric heterostructures
4. Optical power of semiconductor lasers with a low-dimensional active region
5. High-power high-efficiency 1150-nm quantum-well laser
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1. High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures;Semiconductors;2024-03
2. Source of High-Power, High-Repetition-Rate, Pulsed Laser Radiation (1060 nm) Based on a Hybrid Stack of a Laser Diode Bar and a 2D Array of Optothyristors as a High-Speed Current Switch;Bulletin of the Lebedev Physics Institute;2023-10
3. Hybrid and integrated high-power pulse laser-thyristors;2022 International Conference Laser Optics (ICLO);2022-06-20
4. Isotype n-AlGaAs/n-GaAs Heterostructures Optimized for Efficient Interband Radiative Recombination under Current Pumping;Semiconductors;2021-12
5. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm;Quantum Electronics;2021-10-01
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