Photoelectrochemical etching of p-type GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3120545
Reference17 articles.
1. Wet etching of GaN, AlN, and SiC: a review
2. Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN
3. The Bandgap‐Selective Photoelectrochemical Etching of GaAs / Al x Ga1 − x As Heterostructures with Varying Mole Fraction
4. Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
5. Optimization of AlGaN∕GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching
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