Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3551626
Reference22 articles.
1. Growth mechanisms of highly mismatched AlSb on a Si substrate
2. Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study
3. Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
4. Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study
5. Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructures
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