Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation-Reference-Cited by-同舟云学术

Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Published:2021-02-01 Issue:2 Volume:9 Page:021105
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Roede Erik D.¹^ORCID,Mosberg Aleksander B.²^ORCID,Evans Donald M.¹^ORCID,Bourret Edith³,Yan Zewu⁴^ORCID,van Helvoort Antonius T. J.²^ORCID,Meier Dennis¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway

2. Department of Physics, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway

3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

4. Department of Physics, ETH Zurich, Otto-Stern-Weg 1, 8093 Zurich, Switzerland

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0038909

Reference46 articles.

1. Current Status of Ferroelectric Random-Access Memory

2. Ferroelectric tunnel junctions for information storage and processing

3. A ferroelectric semiconductor field-effect transistor

4. Ferroelectric-Based Catalysis: Switchable Surface Chemistry

5. Domains in Ferroic Crystals and Thin Films

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