Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks-Reference-Cited by-同舟云学术

Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks

Published:2019-03-21 Issue:11 Volume:125 Page:115102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sakai Joe¹^ORCID,Bavencoffe Maxime¹^ORCID,Negulescu Beatrice¹^ORCID,Limelette Patrice¹^ORCID,Wolfman Jérôme¹^ORCID,Tateyama Akinori²^ORCID,Funakubo Hiroshi²^ORCID

Affiliation:

1. GREMAN, UMR 7347 CNRS/Université de Tours/INSA-CVL, Parc de Grandmont, 37200 Tours, France

2. Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5083941

Reference26 articles.

1. Metal-Insulator Transitions in Pure and DopedV2O3

2. Metal-Insulator Transition in(V1−xCrx)2O3

3. Evolution of the electronic structure of a Mott system across its phase diagram: X-ray absorption spectroscopy study of (V1−xCrx)2O3

4. Transport properties and c/a ratio of V2O3 thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition

5. A low-voltage high-speed electronic switch based on piezoelectric transduction

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