Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104073
Reference12 articles.
1. Summary Abstract: High purity molecular beam epitaxy grown AlGaAs
2. Comparative photoluminescence study of hydrogenation of GaAs, AlxGa1−xAs, and AlAs
3. Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs
4. Migration-Enhanced Epitaxy of GaAs and AlGaAs
5. Mechanism for dislocation density reduction in GaAs crystals by indium addition
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1. Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy;Journal of Crystal Growth;2005-05
2. Growth of the (In,Al,Ga)As quaternary alloy system on GaAs at low substrate temperatures by molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-03
3. Investigation of indium doping in InGaAs/GaAs/AlGaAs graded‐index separated confinement heterostructure lasers;Journal of Applied Physics;1993-10-15
4. Improved optical properties of low temperature molecular-beam epitaxially grown AlGaAs by In incorporation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05
5. Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures;Solid-State Electronics;1992-05
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