Excess carrier lifetimes in the silicon doping superlattice
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101312
Reference10 articles.
1. Electron States in Crystals with “nipi-Superstructure”
2. The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam Epitaxy
3. Carrier Recombination Times in Amorphous-Silicon Doping Superlattices
4. Persistent Photoconductivity in Doping-Modulated Amorphous Semiconductors
5. Enhancement of carrier lifetime in silicon‐doping superlattices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Advances in HgCdTe N—P—N—P photoconductive structures;Journal of Crystal Growth;1998-02
2. Photovoltaic effect and its polarity in Si doping superlattices;Applied Physics Letters;1993-09-27
3. Delta doping superlattices in silicon;Journal of Electronic Materials;1990-10
4. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography;Advances in Physics;1990-04
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