Silicide formation with codeposited titanium‐tantalum alloys on silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339678
Reference20 articles.
1. Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects
2. Studies of the Ti‐W Metallization System on Si
3. Titanium‐tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation
4. Phase separation and layer sequence reversal during silicide formation with Ni‐Cr alloys and Ni‐Cr bilayers
5. Shallow and parallel silicide contacts
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1. Interfaces evolution in Ti/Si multilayers obtained by laser ablation;16th Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics;2008-12-12
2. Ion mass interferences and matrix effects on SIMS depth profiling of thin Ti/Si multilayer films induced by hydrogen, carbon and oxygen contaminations;International Journal of Mass Spectrometry;2007-05
3. A conductance model (approach) for kinetic studies: The Ti–Ta–Si system;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-11
4. Silicide formation in the Ta/Ti/Si system by reaction of codeposited Ta and Ti with Si (100) and Si (111) substrates;Journal of Applied Physics;1999-02
5. Enhancement of the formation of theC54phase ofTiSi2through the introduction of an interposed layer of tantalum;Physical Review B;1997-10-15
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