Heteroepitaxial growth of ZnSe on (100) Si by low‐pressure organometallic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102185
Reference16 articles.
1. Organometallic vapor deposition of epitaxial ZnSe films on GaAs substrates
2. Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition
3. Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor Deposition
4. Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVD
5. The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure
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1. Optical characterization of ZnSe epilayers and ZnCdSe∕ZnSe quantum wells grown on Ge∕Ge0.95Si0.05∕Ge0.9Si0.1∕Si virtual substrates;Journal of Applied Physics;2006-03-15
2. DC and AC Characteristics of ZnSe/Ge/GaAs and ZnSe/InGaAs/GaAs Lattice-Matched Heterojunction Bipolar Transistors Grown by Metal-Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1994-12-15
3. Laser growth of CdTe epitaxial film on CdTe substrate;Materials Science and Engineering: B;1993-01
4. Tellurium-based II-VI compound semiconductors and heterostructures under strain;Semiconductor Science and Technology;1991-06-01
5. Optical Properties of ZnSe Epilayers and Films;physica status solidi (a);1990-07-16
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