Retention in nonvolatile silicon transistors with an organic ferroelectric gate-Reference-Cited by-同舟云学术

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Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Published:2009-06-29 Issue:26 Volume:94 Page:263507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gysel Roman,Stolichnov Igor,Tagantsev Alexander K.,Riester Sebastian W. E.,Setter Nava,Salvatore Giovanni A.,Bouvet Didier,Ionescu Adrian M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3158959

Reference18 articles.

1. A new solid state memory resistor

2. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

3. A Metal-Insulator-Semiconductor (MIS) Device Using a Ferroelectric Polymer Thin Film in the Gate Insulator

4. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

5. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

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4. Improved Retention Performance in Graphene-Ferroelectric Memory Device Through Mitigation of the Surface Roughness of the Ferroelectric Layer;Journal of Nanoscience and Nanotechnology;2019-04-01

5. Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric;Japanese Journal of Applied Physics;2016-03-08

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