Photoluminescence study of the 1.047 eV emission in GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361266
Reference21 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
4. Iron Acceptors in Gallium Nitride (GaN)
5. Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
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