Investigation of optically active E1 transversal optic phonon modes in AlxGa1−xN layers deposited on 6H–SiC substrates using infrared reflectance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122273
Reference15 articles.
1. Raman scattering in AlxGa1−xN alloys
2. Raman study of Ga1−xAlxN solid solutions
3. Raman characterization of the optical phonons in AlxGa1−xN layers grown by MBE and MOCVD
4. Phonon processes in mixed crystals of CdSx CdSe1-x
5. Application of a Modified Random-Element-Isodisplacement Model to Long-Wavelength Optic Phonons of Mixed Crystals
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1. Assesment of a model to calculate the refractive index of AlXGa1-XN epilayers using the multi-oscillator model simulation of the infrared reflectance;Physica B: Condensed Matter;2022-01
2. Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers;Materials Chemistry and Physics;2020-09
3. Mid-infrared ellipsometry, Raman and X-ray diffraction studies of Al Ga1−N/AlN/Si structures;Applied Surface Science;2017-11
4. Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect;Journal of Applied Physics;2017-05-28
5. Comments on a peak of Al x Ga 1 − x N observed by infrared reflectance;Infrared Physics & Technology;2016-05
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