Erratum: ‘‘Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates’’ [Appl. Phys. Lett. 62, 1411 (1993)]
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Published:1993-07-05
Issue:1
Volume:63
Page:121-121
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ISSN:0003-6951
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Container-title:Applied Physics Letters
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language:en
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Short-container-title:Appl. Phys. Lett.
Author:
Alterovitz S. A.,Sieg R. M.,Pamulapati J.,Bhattacharya P. K.
Subject
Physics and Astronomy (miscellaneous)