A model for fatigue in ferroelectric thin films based on trapping of carriers at interfacial states
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1784612
Reference23 articles.
1. Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features
2. Quantitative measurement of space‐charge effects in lead zirconate‐titanate memories
3. Mechanism of Fatigue in Ferroelectric Thin Films
4. A model for fatigue in ferroelectric perovskite thin films
5. Polarization Fatigue Characteristics of Sol-Gel FerroelectricPb(Zr0.4Ti0.6)O3Thin-Film Capacitors
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1. Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitors;Scientific Reports;2020-04-30
2. On the Importance of the Work Function and Electron Carrier Density of Oxide Electrodes for the Functional Properties of Ferroelectric Capacitors;physica status solidi (RRL) – Rapid Research Letters;2020-01-09
3. Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy;APL Materials;2019-11-01
4. Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001);AIP Advances;2016-12
5. Investigation of fatigue behavior of Pb(Zr0.45Ti0.55)O3thin films under asymmetric polarization switching;Japanese Journal of Applied Physics;2016-08-18
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