Phase control of α- and κ-Ga2O3 epitaxial growth on LiNbO3 and LiTaO3 substrates using α-Fe2O3 buffer layers
Author:
Affiliation:
1. Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
2. Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0006137
Reference29 articles.
1. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy
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3. Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2grown by MIST EPITAXY®
4. Enhancement-Mode $\beta$ -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
5. Self-Powered Solar-Blind Photodetectors Based on α / β Phase Junction of Ga2O3
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