Behavior of aluminum adsorption and incorporation at GaN(0001) surface: First-principles study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4833245
Reference42 articles.
1. Spin-polarized electron emitter: Mn-doped GaN nanotubes and their arrays
2. Thermal stability of epitaxial Fe films on GaN(0001)
3. Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy
4. Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires
5. Spin-dependent photocurrent induced by Rashba-type spin splitting inAl0.25Ga0.75N∕GaNheterostructures
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