Highly efficient and stable electroluminescence from Er-doped Ga2O3 nanofilms fabricated by atomic layer deposition on silicon
Author:
Affiliation:
1. School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, China
Funder
Fundamental Research Funds for the Central Universities
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0049556
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5. Giant enhancement of luminescence intensity in Er‐doped Si/SiO2 resonant cavities
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