Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness-Reference-Cited by-同舟云学术

Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

Published:2018-05-07 Issue:19 Volume:112 Page:193104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ahmadi-Majlan Kamyar¹,Chen Tongjie²,Lim Zheng Hui¹,Conlin Patrick¹^ORCID,Hensley Ricky¹,Chrysler Matthew¹,Su Dong³^ORCID,Chen Hanghui⁴,Kumah Divine P.²^ORCID,Ngai Joseph H.¹

Affiliation:

1. Department of Physics, University of Texas-Arlington, Arlington, Texas 76019, USA

2. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA

3. Center for Functional Nanomaterials, Brookhaven National Laboratory,, Upton, New York 11973, USA

4. Institute of Physics, New York University Shanghai, Pudong, Shanghai 200122, China

Funder

Department of Energy

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5018069

Reference37 articles.

1. Metal-insulator transitions

2. Tuning the Structure of Nickelates to Achieve Two-Dimensional Electron Conduction

3. Atomic-scale control of competing electronic phases in ultrathin LaNiO3

4. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

5. Oxide Interfaces—An Opportunity for Electronics

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