Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1330765
Reference30 articles.
1. Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
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4. Ultrafast‐lifetime quantum wells with sharp exciton spectra
5. Ultrafast 1.55 μm all‐optical switching using low‐temperature‐grown multiple quantum wells
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