Effect of Substrate Imperfections on GaAs Injection Lasers Prepared by Liquid‐Phase Epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1658242
Reference12 articles.
1. The injection laser
2. Physical basis of noncatastrophic degradation in GaAs injection lasers
3. High-power pulsed GaAs laser diodes operating at room temperature
4. Threshold Relations and Diffraction Loss for Injection Lasers
5. A Camera for Borrmann Stereo X-Ray Topographs
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2. Lattice Parameter Changes in Al0.39Ga0.61As Due to O, Ge, Si, and S Doping;Journal of The Electrochemical Society;1983-03-01
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